http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100695990-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
filingDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100695990-B1 |
titleOfInvention | Nonvolatile Memory Devices |
abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nonvolatile memory device. In order to solve the problems caused by the gate formation process of a 2 poly structure, a non-volatile memory device having a 1 poly structure is formed to simplify the process and integrate the device. . |
priorityDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.