http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100692431-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc744e119404fec0abdf375e51d1168d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 2005-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca058cc7ffd6aaa355b25313f7a46f71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1297049011730287d8892fa424072868 |
| publicationDate | 2007-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100692431-B1 |
| titleOfInvention | Light emitting diodes and manufacturing method |
| abstract | In order to efficiently dissipate heat emitted from the light emitting diodes and absorb external shocks applied to the light emitting diodes, a substrate having holes in a predetermined region, an n-type semiconductor layer formed in a hole on the substrate, and an n-type semiconductor layer Provided is a light emitting diode comprising an active layer formed, a p-type semiconductor layer formed on the active layer, a p-electrode formed on the p-type semiconductor layer and a predetermined region of the n-type semiconductor layer, and an n electrode formed on the exposed region. do. |
| priorityDate | 2005-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.