http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100684701-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 |
| filingDate | 2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100684701-B1 |
| titleOfInvention | Transistors, Organic Electroluminescent Devices and Electronic Devices |
| abstract | The present invention provides an electrode which can be manufactured at low cost and has a high hole injection efficiency, an electrode forming method which can easily manufacture such an electrode, a highly reliable thin film transistor, an electronic circuit using the thin film transistor, an organic electroluminescent device, A display device and an electronic device are provided.n n n The thin film transistor 1 is a top gate type thin film transistor, and includes an organic semiconductor layer interposed between the source electrode 20a and the drain electrode 20b and the source electrode 20a and the drain electrode 20b provided separately from each other. 30 and a gate insulating layer 40 positioned between the organic semiconductor layer 30 and the gate electrode 50, and are mounted on the substrate 10. The source electrode 20a and the drain electrode 20b are each composed of two layers of the base electrode layer 21 and the surface electrode layer 22. The surface electrode layer 22 contains an oxide containing at least one of Cu, Ni, Co, and Ag.n n n n Electrode, electrode formation method, thin film transistor, electronic circuit, organic electroluminescent element, display device, electronic device |
| priorityDate | 2003-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 167.