http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100681212-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2005-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100681212-B1 |
| titleOfInvention | Trench type isolation layer formation method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing technology, and more particularly, to trench isolation processes in semiconductor device manufacturing processes. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a trench type isolation layer for a semiconductor device capable of securing mass gap characteristics of a trench buried oxide film while having mass production applicability and productivity. In the present invention, when gap gap filling, a trench gap fill characteristic is secured by combining an O 3 -TEOS (USG) deposition method having excellent step coverage with an NF 3 etching step. O 3 -TEOS (USG) productivity problem drawback of the deposition method were overcome as limiting the O 3 -TEOS film is deposited thick enough to be embedded in the narrow trench in the cell region, securing gaeppil easy-profile through NF 3 etch After that, the gapfill is completed with the existing HDP oxide film which can secure productivity. In this case, it is possible to secure the trench gapfill characteristics while minimizing the productivity degradation associated with the O 3 -TEOS (USG) deposition method.n n n n Trench isolation, gap fill, O₃-TEOS film, NF₃ etching, high density plasma oxide film |
| priorityDate | 2005-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.