http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100678465-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100678465-B1 |
| titleOfInvention | Method of forming an optional epitaxial semiconductor layer |
| abstract | A method of forming an optional epitaxial semiconductor layer is provided. The method includes forming a recess in the semiconductor substrate. The semiconductor substrate having the recess is loaded into the reaction chamber. A semiconductor source gas and a main etching gas are injected into the reaction chamber to selectively grow an epitaxial semiconductor layer on inner walls of the recesses. A selective etching gas is injected into the reaction chamber to selectively etch the fence portion of the epitaxial semiconductor layer overgrown on the main surface of the semiconductor substrate adjacent to the sidewall of the recess.n n n n Selective epitaxial, uniaxial strain, planarization, selective etching |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101116336-B1 |
| priorityDate | 2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.