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filingDate 2003-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100676983-B1
titleOfInvention Method for producing metal oxide powder or semiconductor oxide powder, oxide powder, solid and uses thereof
abstract The present invention uses, for example, a method for producing an oxide mixed in a nanostructure having high electrical conductivity, such as indium-tin-oxide, and an oxide powder, a solid, and these as sputter targets. The oxide is produced by a synthetic reaction while the liquid alloy is sputtered in a very high plasma. The synthesis reaction is initiated at very high temperatures, followed by a controlled thermal state that results in a crystal structure that is free of any defects and allows high mobility of charge.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014065452-A1
priorityDate 2002-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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