http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100674532-B1

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0393
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
filingDate 2005-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100674532-B1
titleOfInvention Method and apparatus for forming a metal thin film on the polymer
abstract The present invention relates to a method and apparatus for depositing a metal thin film on a polymer surface by plasma ion implantation. Specifically, the present invention provides a method and apparatus for depositing a metal by generating a plasma and then sputtering by applying a negative voltage to the metal target and injecting ions by applying a high voltage pulse to the polymer sample. do.n n n According to the present invention, a negative pulse voltage is applied to a polymer substrate to fuse a plasma ion implantation method and a metal deposition method to deposit a metal thin film, thereby forming a smooth interfacial layer, thereby improving adhesion.n n n n Polymer, Adhesion, Metal Thin Film, Formation Method, Plasma, High Voltage Pulse, Ion Implantation
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102179122-B1
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priorityDate 2005-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 39.