http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100671850-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-12 |
| filingDate | 2003-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100671850-B1 |
| titleOfInvention | Modification method of porous film and modified porous film and use thereof |
| abstract | The present invention is a method for modifying a porous film mainly composed of Si-0 bonds, in which a Si-X-Si bonding unit (X represents O, NR, C n H 2n , C 6 H 4 , and R Represents C m H 2m + 1 , or C 6 H 5 , m is an integer of 1 to 6, n is 1 or 2, and at least one Si-A bonding unit (A is H, OH, OC) e H 2e + 1 or a halogen atom, A in the same molecule may be the same or different, and e is an integer of 1 to 6); and contacting an organosilicon compound having two or more and heat-treated without using a metal catalyst. Way. Since the porous film obtained by this method is excellent in both hydrophobicity and mechanical strength, it can be used for an optical functional material or an electronic functional material. It is especially useful as a material for semiconductors, and can be used suitably as an interlayer insulation film of a semiconductor device.n n n Porous film, modification method |
| priorityDate | 2002-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 349.