http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100668542-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2005-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100668542-B1 |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | In the conventional method of manufacturing a semiconductor device, after forming the LOCOS oxide film, since the drain diffusion layer is formed using the buzz beak of the LOCOS oxide film, there is a problem that the positional accuracy of the drain diffusion layer is poor. In the manufacturing method of the semiconductor device of the present invention, the polysilicon film 9 and the silicon nitride film 10 are deposited on the epitaxial layer 4 upper surface. The polysilicon film 9 and the silicon nitride film 10 are patterned so as to remain in the region where the LOCOS oxide film 14 is formed. Then, using the steps between the polysilicon film 9 and the silicon nitride film 10 as alignment marks, the diffusion layer 11 as a drain region is formed. Thereafter, the LOCOS oxide film 14 is formed. By this manufacturing method, the diffusion layer 11 can be formed with high positional accuracy without being affected by the shape of the LOCOS oxide film.n n n n Drain diffusion layer, alignment mark, LOCOS oxide, breakdown voltage characteristics |
| priorityDate | 2004-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.