http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100667043-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Y2200-412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F01P5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F15D1-0055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Y2200-415 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E02F9-0866 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2005-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100667043-B1 |
| titleOfInvention | Zinc oxide single crystal thin film manufacturing method |
| abstract | The present invention includes the steps of charging a substrate into a sputtering chamber equipped with a ZnO target, injecting the argon (Ar) gas and oxygen (O 2 ) gas with a mass flow meter to maintain a predetermined ratio, and the substrate Preheating to a target temperature, and applying an RF power to a cathode to which the target is attached to ionize the argon (Ar) gas and the oxygen (O 2 ) gas in a space between the target and the substrate to a plasma state. And growing a ZnO thin film by bombarding ions ionized in the plasma state with the target such that a sputtered target material is continuously deposited on the substrate. According to the present invention, it is possible to grow a high quality single crystal zinc oxide (ZnO) epitaxial thin film by RF economical radio frequency magnetron sputtering method.n n n n ZnO single crystal, RF magnetron sputtering, RF-DC magnetron co-sputtering |
| priorityDate | 2005-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.