http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100665900-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2004-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100665900-B1 |
| titleOfInvention | Method for manufacturing a semiconductor device having a recess gate |
| abstract | The present invention is to provide a method for manufacturing a semiconductor device that can minimize the height of the horn generated in the recess gate process, the method of manufacturing a semiconductor device of the present invention comprises the steps of forming a device isolation film in a predetermined region of the silicon substrate Etching the active region defined by the device isolation layer to a predetermined depth to form a recess pattern having an edge shape adjacent to the device isolation layer, and filling the bottom portion of the recess pattern. Forming an etch barrier layer having an exposed shape, lowering the height of the horn by etching the horn using the etch barrier layer as an etch barrier, removing the etch barrier layer, and recesses having a lower height of the horn Forming a gate insulating film on the entire surface including a pattern, and forming a gate insulating film on the recess on the gate insulating film. The gods bottom is embedded comprises the steps of forming a recessed gate that protrudes over the upper surface of the silicon substrate. n n n n Recess gate, recess pattern, horn, etching barrier film, photoresist film |
| priorityDate | 2004-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.