http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100653705-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2004-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100653705-B1 |
| titleOfInvention | Thin film formation method using atomic layer deposition |
| abstract | Provided are thin film formation methods using atomic layer deposition. These methods include loading a substrate into a reactor of an atomic layer deposition apparatus and injecting a first source gas containing a first atom into the reactor to form a chemisorption layer containing the first atom on the substrate. do. A first plasma power is applied to the reactor and a first reaction gas is injected to react with the chemisorption layer containing the first atom to form a first thin film. A second source gas containing a second atom is injected into the reactor to form a chemisorption layer containing the second atom on the substrate having the first thin film. A second plasma power higher than the first plasma power is applied to the reactor and a second reaction gas is injected to react with the chemisorption layer containing the second atom to form a second thin film. The first plasma power source may be a value selected from a range greater than 0W and less than 500W, and the second plasma power source may be a value selected from a range greater than the first plasma power source and less than 2000W. The thickness of the second thin film may be formed to be the same or thicker than the thickness of the first thin film. |
| priorityDate | 2004-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.