| abstract |
In the semiconductor device and the manufacturing method thereof according to the present invention, a second insulating film is formed on a second surface of a semiconductor substrate on which a first insulating film and an electrode pad are formed on a first surface, and the electrode pad of the second insulating film is directly formed. Open the lower part. A through hole is formed in the semiconductor substrate using the second insulating film as a mask. At this time, the through hole retreats from the opening edge of the first insulating film. The third insulating film is formed only on the inner wall of the through hole. At this time, the opening edge of the second insulating film and the inner circumferential surface of the third insulating film are formed to match each other from the second surface side of the semiconductor substrate. Thereafter, the first insulating film is etched using the second insulating film as a mask to expose the back surface of the electrode pad, thereby forming a conductive portion serving as the through electrode in the through hole. By the above configuration, a highly reliable through electrode can be easily formed in a low cost.n n n n Semiconductor substrate, insulating film, electrode pad, through hole, conductor portion, external input / output terminals, resist |