| abstract |
In order to provide a semiconductor device, a manufacturing method thereof, a capacitor structure, and a method for manufacturing the semiconductor device capable of high frequency operation and reducing the manufacturing cost, the through holes 40A penetrating through the Si substrate 36 and the Si substrate 36; Through-vias 43A and 43B formed through the insulating material 39 through 40B, the thin film capacitor 46 provided on the first main surface of the Si substrate 36 and electrically connected to the through-vias 43, An interposer 30 provided on the second main surface of the Si substrate 36 on the side opposite to the first main surface, the interposer 30 having an external connection terminal 44 electrically connected to the through vias 43A, 43B, and the first main surface; The semiconductor chip 20 etc. electrically connected with the through via 43 from the side. The thickness M1 of the Si substrate 36 is set smaller than the diameter of the through hole 38.n n n n Interposers, Through Vias, Capacitor Structures, Perovskite |