http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100645189-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02307 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2004-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100645189-B1 |
| titleOfInvention | Method for forming an element isolation film of a semiconductor element |
| abstract | The present invention relates to a device isolation method for forming a semiconductor device, after forming a trench in the device isolation region of a semiconductor substrate subjected to the surface treatment using the organic solvents prior to the insulating material deposited, trenches filled with O 3 TEOS process when The insulating material is deposited at a uniform rate on all surfaces irrespective of the type of the lower film, thereby preventing the occurrence of voids in the device isolation film even in a narrow area, thereby improving process reliability and electrical characteristics of the device have. n n n n Device separation membrane, STI, O3 TEOS, deposition rate, organic solvent, void |
| priorityDate | 2004-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.