http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100640528-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7923 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2004-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100640528-B1 |
| titleOfInvention | Method for Heat Treatment on Ohen Film |
| abstract | The present invention relates to a method for heat treatment in an ONO film, comprising: forming a gate oxide film on a semiconductor substrate; Depositing a first polysilicon layer on the gate oxide film; Sequentially stacking a first oxide film and a nitride film on the first polysilicon layer; Heat-treating the nitride film with in-situ hydrogen and depositing a second oxide film on the nitride film, and performing a heat treatment process with in-situ hydrogen after deposition of a nitride film when forming a dielectric in an ONO structure. As a result, the dangling bonds present at the upper and lower interfaces of the first oxide film may be combined with hydrogen to improve the interface characteristics without loss of the first oxide film due to the reduction reaction.n n n n ONO, in situ, hydrogen heat treatment |
| priorityDate | 2004-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.