| abstract |
A semiconductor device having a through electrode is simply obtained. The manufacturing method of the semiconductor device of this invention is a process of bonding a support plate to the back surface of the board | substrate main body in which the circuit element part 2 was formed in the circuit formation surface of the surface, the process of forming a 1st groove part in a board | substrate main body, and an insulating material To form an insulating film 17 on the surface of the semiconductor substrate 50, and to form a hole in the first groove portion, and to form a metal wiring pattern 8 reaching the inner wall of the hole from the electrode portion. And a step of removing a predetermined amount of the bottom surface of the hole, a step of forming a through electrode 10 by embedding a conductive material in the hole, and a step of forming a second groove part in the first groove part.n n n n Semiconductor device, manufacturing method, electronic device, insulating film, through electrode, hole, groove, metal wiring |