| abstract |
The method of forming the buried wiring of the present invention comprises the steps of (A) forming a first insulating film on a substrate, the wiring and the wiring being buried, (B) dissolving the first insulating film in a fluid, ( C) replacing the fluid with a raw material solution containing a second insulating film-forming raw material without contacting the wiring with the base; (D) at least a second insulating film gelled in the raw material solution; After filling the gap, the raw material solution is dried to form a second insulating film at least between the wirings.n n n n Gas, gas processing apparatus, embedded wiring formation method. |