| abstract |
In the semiconductor device according to the present invention, the driving positive pump circuit 14 is driven by an external power supply voltage EXVDD (for example, 1.8V) to generate a positive voltage VPC (for example, 2.4V). The negative pump circuit 15 for internal operation is driven by the positive voltage VPC to generate the negative voltage VNA (for example, -9.2V) required for the word line during internal driving such as the erase operation. Therefore, the negative pump circuit 15 for internal operation reduces the number of stages of a pump compared with the conventional one which was driven by the external power supply voltage EXVDD (for example, 1.8V), and the area of a circuit is reduced.n n n n Pump Circuits, P-Channel MOS Transistors, N-Channel MOS Drivers, Clock Drivers, Charge Pumps, Inverters |