http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100634509-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2004-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100634509-B1 |
| titleOfInvention | 3D semiconductor capacitor and manufacturing method thereof |
| abstract | The present invention relates to a three-dimensional semiconductor capacitor comprising a Group 5 oxide and Ta oxide and a method of manufacturing the same. The semiconductor substrate, a gate structure formed between the first impurity region and the second impurity region formed by doping conductive impurities to the semiconductor substrate, the first impurity region and the second impurity region, and the second impurity region and the conductive plug A method of manufacturing a semiconductor memory device including a three-dimensional semiconductor capacitor connected to each other, the capacitor having a three-dimensional structure comprising: stacking a first dielectric layer with a Group 5 oxide and forming a spacer by dry etching; Forming a bottom electrode; And forming a second dielectric layer with Ta 2 O 5 on the lower electrode. This induces low-temperature crystallization of Ta 2 O 5 has the effect of greatly preventing the deterioration of the capacitor properties due to high temperature oxidation. |
| priorityDate | 2004-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.