http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100633316-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G2-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2000-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100633316-B1 |
| titleOfInvention | Manufacturing method of thin film transistor array substrate for antistatic |
| abstract | The present invention relates to a thin film transistor array substrate, and in order to prevent electrostatic defects between even-numbered gate lines and odd-numbered gate lines respectively connected by short-circuit lines, extending from the arbitrary odd-numbered gate pads, The adjacent even-numbered gate pads are formed so as to face the antistatic wiring extending from the connected gate short wiring very closely, and when static electricity is generated between the two gate wirings during dry etching, the electrostatic discharge is discharged from the antistatic wiring, thereby preventing the electrostatic defects. In addition, since the process of separately cutting the antistatic wiring in a later process can be omitted, there is an effect of preventing damage to the pixel electrode generated during the cutting process. |
| priorityDate | 2000-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.