http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100631933-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0453 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-20 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
| filingDate | 2000-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100631933-B1 |
| titleOfInvention | How to make a stencil mask |
| abstract | The present invention relates to a method for manufacturing a stencil mask, comprising: patterning a photoresist on an SOI wafer, etching to a depth capable of selectively blocking incident electrons, and coating Si 3 N 4 with a pattern protective film After the back window patterning using photoresist on the back side of the wafer, etching Si 3 N 4 / Si / SiO 2 on the back side, removing the Si 3 N 4 film, and applying platinum to prevent electron charging The step of depositing the W / TiN / Ti on the silicon wafer, patterning using a photo resist, then etching, applying a Si 3 N 4 film with a pattern protective film, using a photo resist on the back of the wafer Rear window patterning, Si 3 N 4 / Si on the back After etching the film, the step of removing the Si 3 N 4 film, and bonding the two masks using a silver paste, the beam blurring phenomenon caused by the coulomb repulsion generated during photo printing or mask manufacturing using an electron beam Effective reduction can increase the resolution. |
| priorityDate | 2000-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.