http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100631037-B1

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
filingDate 2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2006-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100631037-B1
titleOfInvention Method of manufacturing III-nitride semiconductor light emitting device effective for suppressing and removing leakage current
abstract In the method of manufacturing a III-nitride semiconductor light emitting device according to the present invention, the light emitting active layer 40 made of AlGaInN interposed between the lower contact layer 32 made of n-AlGaInN and the upper contact layer 34 made of p-AlGaInN. A method of manufacturing a III-nitride-based semiconductor light emitting device comprising a basic solution having a pH of 11 to 14 or a pH of 1 to 14, including a solution having a boiling point of 100 ° C. to 1000 ° C. at the surface of the upper contact layer 34. It characterized in that it comprises a process of wet etching in the temperature range of 100 ℃ to 1000 ℃ acid solution of 4. According to the present invention as described above, although the AlGaInN-based light emitting diode, the surface defect, the natural oxide film and the contaminant layer existing in the upper contact layer 34 by wet etching effectively removes and the passivation layer is also formed as a light emitting diode Significantly reduces the leakage current of the device, greatly improving the life of the device, and greatly improving the overall characteristics such as efficiency and reliability of the device.n n n n AlGaInN, Passive Membrane, Wet Etch, Basic, Acid, Leakage Current
priorityDate 2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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