http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100629696-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2004-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100629696-B1 |
| titleOfInvention | Method of manufacturing semiconductor device having recess gate |
| abstract | To provide a method of manufacturing a semiconductor device having a recess gate suitable for preventing the leakage current caused by the horn generated in the upper portion of the recessed active region adjacent to the device isolation film during the active region recess process, The present invention provides a method of forming an isolation layer defining an active region in a predetermined region of a silicon substrate, and first etching the active region to a predetermined depth (a mixed plasma of Cl 2 / N 2 ) to form a trench in an edge portion adjacent to the isolation layer. Forming a recessed active region having a shape, and performing a second etching (Cl 2 / SF 6 mixed plasma) on the recessed active region so that the bottom portion has a rounded shape, As described above, the present invention induces the trench shape of the edge portion in the first etching process to form the recessed active region, and then the second etching. Performing isotropic etching to stand does not generate the final recessed active region of the bottom, creating a shape with rounded horn shape at the same time in the upper portion of the recessed area of the active region adjacent to the device isolation film (Horn).n n n n Recessed gate, recessed active region, plasma, round, trench shape, isotropic etching |
| priorityDate | 2004-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.