http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100624328-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100624328-B1 |
| titleOfInvention | Method for manufacturing device isolation structure by shallow trench |
| abstract | The present invention provides a method for producing an STI, which is a device isolation structure by shallow trenches. By controlling the process parameters of the etching process for forming the STI trenches, stress on the trenches can be minimized, and defects or dislocations in the trenches can be effectively prevented. Here, the etching process uses an HBr plasma, and adjusts the shape of the STI by controlling process variables such as the amount of oxygen and pressure, and suppresses the generation of stress, defects and dislocations. The amount of oxygen added is preferably in the range of 3 sccm to 10 sccm, and the amount of oxygen is preferably adjusted in accordance with the lattice direction of the semiconductor substrate. On the other hand, the pressure is preferably adjusted to a pressure of about 50 mTorr while using a plasma of HBr + Cl 2 = 5: 1 in the trench etching process. By applying the method of the present invention, it is possible to easily prevent the occurrence of defects, dislocations and stresses by a simple process of adjusting the STI process parameters, and to dramatically reduce the leakage current, which is the main cause of the inoperability of the semiconductor device, as well as the flash. DC failure of the device can be prevented. In addition, a process such as a conventional heat treatment does not need to be added, which can simplify the process.n n n n Trench, STI, Defect, Stress, Dislocation |
| priorityDate | 2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.