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filingDate 2004-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100621117-B1
titleOfInvention Semiconductor laser and its manufacturing method
abstract A clad layer 103 of the first conductivity type, a clad layer 107 of the second conductivity type, and an active layer 105 disposed between the two clad layers are provided, and the clad layer of the second conductivity type has a resonator. The current block layer 112 is formed to have at least one ridge structure extending in the direction and to cover at least the side surface of the ridge structure. The current block layer includes a first dielectric film 111 to which hydrogen is added. In a ridge stripe structure semiconductor laser in which a current block layer is formed of a dielectric, the light trapping efficiency is improved, the laser oscillation threshold is reduced, and the current characteristics at high temperature and high output oscillation are improved.
priorityDate 2003-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.