http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100616516-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2003-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100616516-B1 |
| titleOfInvention | Gallium nitride-based semiconductor light emitting device and its manufacturing method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high efficiency gallium nitride based semiconductor light emitting device and a method of manufacturing the same. A p-type gallium nitride-based semiconductor layer formed on the active layer and delta-doped with carbon, and n-side and p-side electrodes connected to the n-type and p-type gallium nitride-based semiconductor layers, respectively. In addition, the carbon impurity concentration of the p-type gallium nitride-based semiconductor layer provides a gallium nitride-based semiconductor light emitting device, characterized in that 1 × 10 16 ~ 5 × 10 20 / cm 3.n n n According to the present invention, in the growth of the p-type nitride semiconductor layer, delta doping is performed by stopping the gallium source and supplying carbon during the MOCVD process, thereby significantly increasing the conductivity of the p-type nitride semiconductor layer and dislocation density. Can be suppressed to obtain excellent crystallinity.n n n n Gallium nitride (GaN), delta-doping, light emitting diodes |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109273569-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109346584-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109346584-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109273569-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101438806-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112951961-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103996759-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101262726-B1 |
| priorityDate | 2003-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.