http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100613280-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100613280-B1 |
| titleOfInvention | Method of forming metal-insulator-metal capacitors in semiconductor devices |
| abstract | The metal-insulator-metal capacitor forming method of the present invention includes forming a trench in a lower insulating film disposed below the metal-insulator-metal capacitor to be formed, and forming a lower electrode metal film on the lower insulating film on which the trench is formed. Patterning the lower electrode metal film to form a lower electrode metal film pattern over the lower insulating film and on the inner walls of the trench; sequentially forming a dielectric film and an upper electrode metal film over the lower insulating film and the lower electrode metal film pattern; And sequentially stacking and patterning the upper electrode metal film and the dielectric film to form a dielectric film pattern and an upper electrode metal film pattern on the lower electrode metal film.n n n n MIM Capacitors, Capacitance, Metallic Polymer |
| priorityDate | 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.