http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100607770-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100607770-B1 |
| titleOfInvention | STI manufacturing method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing shallow trench isolation (STI) that insulates semiconductor devices. In the prior art, when performing a Reactive Ion Etching (RIE) process to form an STI, a portion of the pad dielectric is damaged, resulting in the formation of a leak in the STI. The present invention inserts a PSG 22 capable of accumulating charge in the STI, so that the charge that is intended to pass through the STI is once absorbed in the PSG 22. Therefore, there is an effect of reducing the STI's liquidity. |
| priorityDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.