http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100607409-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate | 2004-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2006-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100607409-B1 |
titleOfInvention | Substrate etching method and semiconductor device manufacturing method using the same |
abstract | The substrate etching method and the semiconductor device manufacturing method may accelerate the etching reaction of the first gas and the first gas for etching the semiconductor material to lower the etching reaction temperature and supply a second gas containing hydrogen onto the semiconductor substrate, The semiconductor substrate is etched using the gases. Examples of the first gas include HCl and HF, and examples of the second gas include GeH 4 , SiH 4 , Si 2 H 6 , SiH 2 Cl 2 , SiHCl 3 , PH 3 , B 2 H 6 , AsH 3 Etc. can be mentioned. Since the second gas promotes decomposition of the first gas, the semiconductor substrate made of Si, Ge, or SiGe may be etched at a low temperature of 500 to 700 ° C. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190105766-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102069345-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017210139-A1 |
priorityDate | 2004-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.