http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100607409-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2004-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2006-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100607409-B1
titleOfInvention Substrate etching method and semiconductor device manufacturing method using the same
abstract The substrate etching method and the semiconductor device manufacturing method may accelerate the etching reaction of the first gas and the first gas for etching the semiconductor material to lower the etching reaction temperature and supply a second gas containing hydrogen onto the semiconductor substrate, The semiconductor substrate is etched using the gases. Examples of the first gas include HCl and HF, and examples of the second gas include GeH 4 , SiH 4 , Si 2 H 6 , SiH 2 Cl 2 , SiHCl 3 , PH 3 , B 2 H 6 , AsH 3 Etc. can be mentioned. Since the second gas promotes decomposition of the first gas, the semiconductor substrate made of Si, Ge, or SiGe may be etched at a low temperature of 500 to 700 ° C.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190105766-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102069345-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017210139-A1
priorityDate 2004-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020070820-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523132
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID783
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID6768
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327210
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID557248
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID19143
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/gene/GID678603
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425193155
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326954
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098976

Total number of triples: 31.