http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100600154-B1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-287 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2867 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-0491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-0433 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 2002-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2006-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100600154-B1 |
titleOfInvention | Reliability Assessment Test Apparatus, Reliability Assessment Test System, and Reliability Assessment Test Method |
abstract | The reliability test apparatus 10 of the present invention includes a wafer storage portion 12 that accommodates electrode pads of each of a plurality of devices formed on the wafer W and the bumps of the contactor 11 in electrical contact with each other. This wafer storage portion 12 receives a test signal from the measurement portion 15 and has an airtight, heat-insulating structure. The wafer accommodating part 12 has the press mechanism 13 which presses the contactor 11, and the heating mechanism 14 which directly heats the wafer W which contacted the contactor 11 collectively at predetermined high temperature, and accelerated conditions The reliability of the wiring film and the insulating film formed on the semiconductor wafer is evaluated below. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101003870-B1 |
priorityDate | 2001-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.