| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2004-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100598103-B1 |
| titleOfInvention |
Pattern Formation Method |
| abstract |
It provides a pattern formation method. The method includes forming a bottom photoresist on a substrate on which a bottom layer is formed, and forming a top photoresist pattern including a silylated layer on the bottom photoresist. The lower photoresist is anisotropically formed to form a lower photoresist pattern. At this time, the silicide layer is oxidized to serve as an etching mask. The lower layer is etched using the upper photoresist pattern and the lower photoresist pattern as etch masks. |
| priorityDate |
2004-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |