http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100598005-B1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-114 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 |
filingDate | 2002-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2006-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100598005-B1 |
titleOfInvention | Responsive Image Formation |
abstract | A photoresist technology that can be used for the manufacture of semiconductor integrated circuits, printed wiring boards, or liquid crystal panels, and has a general chain having a carbonyl group (C = O) bonded to a heteroatom without having any special reactor in the side chain of the resin skeleton. Resin is used to directly attack these bonds, providing a means of breaking the bonds.n n n The present invention relates to a carbonyl group in which the photoresist layer is bonded to a heteroatom in the developing image forming method comprising irradiating ultraviolet rays to a photoresist layer masked with a desired pattern and then washing the layer with a solvent containing an alkali. A reaction developing image forming method comprising a condensation type polymer containing a (C = O) in a main chain and a photoacid generator, wherein the alkali is an amine. This reaction image forming method makes it possible to use a resin having a low reactivity bond with a nucleophilic agent such as a condensation polymer having a bond of any one of carbonate, ester, urethane or amide as a target of the photoresist. There is a characteristic. |
priorityDate | 2001-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.