http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100593833-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02W30-20 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate | 2004-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100593833-B1 |
| titleOfInvention | Separation and recovery method of ultra-high purity phosphoric acid from semiconductor waste etching solution |
| abstract | The present invention relates to the separation, a method for recovering ultra-high purity phosphoric acid from a semiconductor waste etching solution, and more particularly, to a method for recycling the waste etching solution to be discharged from a semiconductor etching process, the silicon nitride of the silicon wafer film (Si 3 N 4) etch process The present invention relates to a method for separating and recovering ultrahigh purity phosphoric acid, respectively, by performing a film-slip crystallization process without adding an additive or a solvent from the waste etchant.n n n n Semiconductor waste etching solution, phosphoric acid, silicon nitride film, |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100804197-B1 |
| priorityDate | 2004-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.