http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100591609-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
filingDate | 2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2006-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100591609-B1 |
titleOfInvention | Polymer Compounds, Resist Compositions and Pattern Forming Methods |
abstract | The copolymer of an acrylic monomer having at least one C 6-20 alicyclic structure and a norbornene derivative or styrene derivative having a hexafluoroalcohol pendant is highly transparent to VUV rays and resistant to plasma etching. The resist composition using this high molecular compound as a base resin is sensitive to high energy rays of 200 nm or less, is excellent in sensitivity, transparency, and dry etching resistance, and is suitable for lithography fine processing.n n n Acrylic monomer, hexafluoroalcohol, styrene, copolymer, resist |
priorityDate | 2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 813.