http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100591179-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2006-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100591179-B1
titleOfInvention Metal wiring formation method of semiconductor device
abstract Stacking a first etch stop film, an interlayer insulating film, a second etch stop film, and a wiring insulating film on a semiconductor substrate having a predetermined substructure, forming a contact hole pattern on the wiring insulating film, and exposing the contact hole pattern as a mask. Etching the formed wiring insulating film, the first etch stop film, and the interlayer insulating film to form a contact hole, removing the contact hole pattern, and then forming a trench pattern on the wiring insulating film, and using the trench pattern as a mask. Etching to form a trench, removing the trench pattern, removing the exposed first etch stop layer and the second etch stop layer, forming a first metal thin film in the contact hole and the trench, and forming the first metal thin film. And forming a second metal thin film thereon.n n n n Metal thin film, metal wiring, metal seed film
priorityDate 2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001168188-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341

Total number of triples: 19.