| abstract |
The present invention relates to a semiconductor device and a method for manufacturing a bonding pad of the semiconductor device, and an object thereof is to prevent a foreign substance from forming on an opening surface exposed through the bonding pad, thereby reducing a bonding defect rate and improving device reliability. To this end, in the present invention, forming the uppermost metal wiring of a predetermined width on the structure of the semiconductor substrate; Forming an insulating film on the entire upper surface of the structure of the semiconductor substrate including the uppermost metal wiring; Partially etching the insulating film to form a bonding pad exposing a predetermined region of the uppermost metal wiring; And a bonding pad to clean the upper surface of the insulating film after plasma etching, wherein the plasma etching is performed by injecting CF 4 , Ar, and O 2 gas and generating plasma, and the cleaning is performed by removing the solvent, isopropyl alcohol. And sequentially immersing in deionized water and drying to clean the upper surface of the uppermost metal wiring and the side surface of the insulating layer exposed through the bonding pad to form the bonding pad of the semiconductor device.n n n n Bonding Pads, Plasma, Cleaning |