http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100586542-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F216-06
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F230-02
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filingDate 2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2006-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100586542-B1
titleOfInvention Upper antireflection film polymer, preparation method thereof and antireflection film composition comprising the same
abstract The present invention is introduced to the top of the photoresist in the ultrafine pattern forming process of the photoresist for lithography using a 193 nm ArF or 157 nm VUV light source, and the like, an organic antireflection film polymer having a structure of the formula (1), the preparation thereof The present invention relates to a method and an antireflective coating composition comprising the same, and in particular, to protect a photoresist from an amine, thereby improving post-exposure delay stability and minimizing pattern distortion due to a swing phenomenon during pattern formation. An organic antireflection film polymer, a method for producing the same, and an antireflection film composition containing the same.n n n [Formula 1]n n n n n n n n Wherein n and m are integers of 5-5,000.n n n n Photoresist, organic antireflective film, amine, swing, diffuse reflection, post-exposure extension
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102230712-B1
priorityDate 2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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