| abstract |
The present invention relates to a method for producing a metal or metal-containing layer (5) using a precursor on a silicon- or germanium-containing layer of an electronic component. This causes the intermediate layer 4 to be applied to the silicon- or germanium-containing layer 3 before using the precursor. The intermediate layer forms a diffusion barrier for at least the components of the precursor that will etch the silicon- or germanium-containing layer and itself resists etching by the precursor.n n n n Silicon-containing layers, germanium-containing layers, precursors, metals, metal-containing layers, interlayers, diffusion barriers |