http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100578131-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2003-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100578131-B1 |
| titleOfInvention | Nonvolatile Memory Device and Formation Method |
| abstract | A nonvolatile memory device and a method of forming the same are provided. This nonvolatile memory device has a substrate having at least first and second regions. The first gate electrode is disposed on the substrate in the first region, and the multilayer charge storage layer is interposed between the first gate electrode and the substrate. The multilayer charge author layer consists of a tunnel insulating film, a trap insulating film, and a blocking insulating film that are sequentially stacked. A second gate electrode consisting of lower and upper gates is disposed on the substrate of the second region. A gate insulating film is interposed between the second gate electrode and the substrate. As a result, both the unit cell and the predetermined transistors of the nonvolatile memory device can be optimized. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7585787-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7696563-B2 |
| priorityDate | 2003-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.