| abstract |
The present invention provides a process for forming an etchant comprising nitric acid (NH 3 ), iron nitrate (Fe (NO 3 ) 3 ), perchloric acid (HClO 4 ), ammonium fluoride (NH 4 F) and a gate wiring using the same; The process of forming the pixel electrode by applying the etchant enables the formation of the gate wiring and the pixel electrode by applying one etchant and the simultaneous removal of the antistatic circuit part in the process of forming the pixel electrode. It is characterized by simplifying the manufacturing process of the device.n n n n Etchant, gate metal etching, amorphous ITO, antistatic circuit part |