http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100574483-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02142 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1999-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100574483-B1 |
| titleOfInvention | Method for producing titanium silicide nitride film by CBD method |
| abstract | The present invention provides a titanium silicide that produces a titanium silicide nitride film having an advantage of excellent layer covering even in deep and narrow contacts, an amorphous structure having no grain boundaries, excellent diffusion preventing ability, and excellent oxidation resistance property by a chemical vapor deposition method. According to the nitride film manufacturing method, the process flow of the deposition gas in the CVD chamber composed of TiCl 4 gas line and SiH 4 gas line independently is TiCl 4 1sccm ~ 100sccm, SiH 4 1sccm ~ 300sccm, H 2 100sccm ~ 5000sccm, N 2 100sccm ~ 3000sccm, Ar 10sccm ~ 500sccm, TiCl 4 and SiH 4 are independently supplied to the CVD chamber by an independent gas line configuration, the deposition temperature is 300 ℃ ~ 700 ℃, the deposition pressure is 1torr ~ 20torr, RF The power is characterized by exciting and depositing a plasma in the range of 100W to 1KW.n n n Ternary Titanium Sinitride CVD Chemical Vapor Deposition Plasma |
| priorityDate | 1999-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.