| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-3154
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-24 |
| filingDate |
1998-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100573708-B1 |
| titleOfInvention |
Low dielectric constant material made from photon or plasma assisted CDD |
| abstract |
Intermetal dielectric materials (IMDs) and interlayer dielectric materials (ILDs) having a dielectric constant (K) of 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). Low dielectric constant materials (LKD) are made from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin film combines barrier and adsorption layer functions with low dielectric constant functions, thereby eliminating the need for separate adsorption and barrier layers and low dielectric constant layers. The LKD materials disclosed herein are particularly useful for 0.18 μm ICs, when copper is used as conductor in preliminary ICs. |
| priorityDate |
1997-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |