http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100571398-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2004-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100571398-B1 |
| titleOfInvention | Wiring Formation Method of Semiconductor Device |
| abstract | SUMMARY OF THE INVENTION An object of the present invention is to effectively prevent parasitic capacitance and contact resistance between wirings and wiring corrosion during wiring formation of a semiconductor device using a low dielectric constant interlayer insulating film.n n n An object of the present invention is to form an interlayer insulating film with an insulating film of low dielectric constant on a semiconductor substrate formed with a lower wiring; Etching the interlayer insulating layer to expose a portion of the lower interconnection to form holes; Cleaning the hole-formed substrate with an inorganic chemical solution diluted with a mixed solution of 49% hydrofluoric acid (HF) solution and deionized ultrapure water; And forming an upper wiring in contact with the lower wiring while filling the hole.n n n n Inorganic chemical solution, sheet type, polymer, cleaning, low dielectric constant insulating film |
| priorityDate | 2004-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.