| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-30455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2367-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31701 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16L59-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21K5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21G5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61N5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05C11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08 |
| filingDate |
2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100568254-B1 |
| titleOfInvention |
Method for manufacturing electronic device with adjustable threshold voltage, ion implanter regulator and ion implantation system |
| abstract |
Provided are a method of manufacturing an electronic device capable of compensating a threshold voltage variation due to a change in a critical dimension of a gate electrode and securing process margins and reducing defects, and an ion implanter regulator and an ion implantation system used therein. The method of manufacturing an electronic device adjusts the junction contact plug ion implantation recipe of a transistor based on the measurement threshold dimension of the gate electrode formed on the wafer, and then implants the junction contact plug ions using the adjusted recipe.n n n n Critical Dimensions, Ion Implant Recipes, Threshold Voltages, Junction Contact Plugs |
| priorityDate |
2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |