| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01C1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2003-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100568109-B1 |
| titleOfInvention |
Phase change memory device and its formation method |
| abstract |
The present invention provides a phase change memory device and a method of forming the same. This element has a heating electrode having an electrode hole. The electrode hole passes through a predetermined region of the heating electrode. The phase change material pattern contacts the inner wall of the electrode hole. Accordingly, the power consumption of the phase change memory device can be reduced by reducing the contact area between the heating electrode and the phase change material pattern. |
| priorityDate |
2003-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |