http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100566334-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D1-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2004-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100566334-B1 |
| titleOfInvention | Chemical Mechanical Polishing Slurry Composition of Copper |
| abstract | The present invention relates to a slurry for polishing a substrate that can realize a high polishing rate without including abrasive particles, comprising: an oxidizing agent; Anticorrosive agents; Polymeric organic acids; Phosphoric acid or malic acid or mixtures thereof; Surfactants; And tetrazole derivatives as scratch inhibitors. Specific polishing slurry compositions according to the present invention include 3.0 to 20.0% by weight of hydrogen peroxide as an oxidant, 0.01 to 1.0% by weight of benzotriazole as an anticorrosive, 0.01 to 1.0% by weight of polyacrylic acid as a polymer organic acid, phosphoric acid or malic acid or a mixture thereof 0.01 To 1.0 wt%, 0.001 to 1.0 wt% surfactant, and 0.01 to 1.0 wt% 5-aminotetrazole as the scratch inhibitor.n n n The polishing slurry according to the present invention has the effect of reducing defects on the copper surface without reducing the polishing rate of copper compared to the conventional polishing slurry, and also has no surface defects such as scratches on the surface of the wafer after the CMP process and etching. The rate is also low, which has advantages in the future dishing of copper wiring.n n n n Abrasive, Slurry, Copper, Selectivity, Aminotetrazole, CMP |
| priorityDate | 2004-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.