http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100563425-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-906 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-907 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-208 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 |
| filingDate | 1997-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100563425-B1 |
| titleOfInvention | Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
| abstract | The present invention relates to a method and apparatus for controlling the concentration and distribution of oxygen in a single crystal silicon rod extracted from an antimony or arsenic selectively doped silicon melt, according to the Czochralski method in which the gas atmosphere is maintained on top of the melt. In one embodiment of the method, the gas pressure of the gaseous atmosphere above the melt is gradually increased to a value above 100 Torr as the portion of the solidified silicon melt increases. In subsequent embodiments of the method, the gas pressure of the gas atmosphere on top of the melt is maintained at or near a constant value above 100 Torr. The method and apparatus are even more characteristic in that a controlled flow of inert gas is used to remove vapors and particulates from the rods and melts, resulting in zero dislocations single crystal silicon rods. |
| priorityDate | 1996-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.