http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100561839-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2002-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100561839-B1 |
| titleOfInvention | Ferroelectric Capacitors and Manufacturing Method Thereof |
| abstract | A ferroelectric capacitor and a method of manufacturing the same are disclosed. According to an embodiment of the present invention, a lower electrode, a ferroelectric film, and an upper electrode are sequentially provided on a conductive film connected to a transistor formed on a semiconductor substrate, and the conductive film is formed on a ferroelectric capacitor of a semiconductor device surrounded by an interlayer insulating film covering the transistor. The conductive film is formed on the interlayer insulating film, and an antioxidant film is provided between the conductive film and the lower electrode. The antioxidant film is any one of a CoSi 2 film and a TiSiN film, and the conductive film is conductive. A ferroelectric capacitor of a semiconductor device and a method of manufacturing the same, which are any one of a polycrystalline silicon film and a tungsten film. By using the present invention, since the oxidation resistance of the conductive plug-in conductive film and the lower electrode interface is increased, the formation temperature of the ferroelectric thin film can be increased, and as a result, a ferroelectric thin film having excellent characteristics can be formed. |
| priorityDate | 2001-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.