http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100555285-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F222-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F20-22 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 2001-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100555285-B1 |
| titleOfInvention | Polymer Compounds, Resist Compositions and Pattern Forming Methods |
| abstract | The present invention relates to a polymer compound having a repeating unit represented by the following formula (1). In addition, the resist composition of the present invention is sensitive to high energy rays and is excellent in sensitivity, resolution, and plasma etching resistance at wavelengths of 200 nm or less, particularly 170 nm or less. Therefore, the resist composition of the present invention can be a resist composition having a low absorption, especially at the exposure wavelength of an F 2 excimer laser, and can easily form a fine and vertical pattern with respect to the substrate, thereby making the ultra LSI It is suitable as a fine pattern formation material for manufacture.n n n <Formula 1>n n n n n n n n Wherein R 1 is a straight-chain, branched or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms, may be a crosslinkable hydrocarbon group, R is a hydrogen atom or an acid labile group, and 0 ≦ m ≦ 3, 0 ≦ n ≦ 3, 1 ≦ m + n ≦ 6.n n n Polymer compound, resist composition, pattern formation method |
| priorityDate | 2000-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.